Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming decoupling capacitors between the interposing conductors and the multiple gates

Method for forming decoupling capacitors between the interposing conductors and the multiple gates

US Patent 11817452 · Granted Nov 14, 2023

Estimated economic value: $9,707,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dielectric slots underneath conductive vias in interconnect structure of semicon2025
Circuits designed and manufactured with first and second design rules2025
Power management watchdog2025
Methods of manufacture having redistribution layer using dielectric material pho2025
Semiconductor structure and semiconductor device2025
Wafer inspection system2025
Cell having stacked pick-up region2025
Cell having stacked pick-up region2025
Package structure including auxiliary dielectric portion2025
Semiconductor package and method of forming the same2025
Package structure and method of manufacturing the same2025
Semiconductor device and method2025