Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ferroelectric random access memory device and method for operating read and write thereof

Ferroelectric random access memory device and method for operating read and write thereof

US Patent 11790971 · Granted Oct 17, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SRAM with improved write performance and write operation method thereof2025
Content addressable memory based on selfrectifying ferroelectric tunnel junction2025
Content addressable memory based on selfrectifying ferroelectric tunnel junction2025
Dual-edge-triggered flip-flop2025
Dual-edge-triggered flip-flop2025
Server, heat pump system, and method of authenticating installation of heat pump2024
Bit line sense amplifier and semiconductor memory apparatus using the same2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024
Ferroelectric FET nonvolatile sense-amplifier-based flip-flop2024