Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of producing SiC single crystal ingot

Method of producing SiC single crystal ingot

US Patent 11761114 · Granted Sep 19, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SiC single crystal growth crucible, SiC single crystal manufacturing method, and2024
SiC single crystal, method of manufacturing SiC ingot, and method of manufacturi2024
Single crystal growth crucible and single crystal growth method2023
Crucible and SiC single crystal growth apparatus2023
SiC single crystal composite and SiC ingot2023
SiC ingot and method of manufacturing SiC ingot2022
Heat-insulating shield member and single crystal manufacturing apparatus having 2022
Crystal growth apparatus including heater with multiple regions and crystal grow2022
Thermal conductivity measuring device, heating device, thermal conductivity meas2022
SiC single crystal manufacturing apparatus and structure having container and fi2022
Single crystal growth crucible having a first housing and a second housing, and 2022
SiC single crystal manufacturing apparatus and SiC single crystal manufacturing 2022