Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistors

Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistors

US Patent 11742345 · Granted Aug 29, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional sta2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Integrated circuit devices including a metal resistor and methods of forming the2025
Resistor structures of integrated circuit devices including stacked transistors 2025
Integrated circuit devices including a power distribution network and methods of2025
Selective double diffusion break structures for multi-stack semiconductor device2024
Stacked device with backside power distribution network and method of manufactur2024
Crossing multi-stack nanosheet structure and method of manufacturing the same2024
Crossing multi-stack nanosheet structure and method of manufacturing the same2024
Stacked semiconductor device having mirror-symmetric pattern2024
Stacked semiconductor device having mirror-symmetric pattern2024
Three-dimensional semiconductor device having vertical misalignment2024