Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements

Metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements

US Patent 11735521 · Granted Aug 22, 2023

Estimated economic value: $16,803,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Antenna-in-package with heat dissipation structure2025
Precise writing of multi-level weights to memory devices for compute-in-memory2024
Heterogeneous integration semiconductor package structure2024
Ear tag module2023
FinFET transistors as antifuse elements2022
Hot carrier injection fuse memory2022
Hot carrier injection fuse memory2022
Hot carrier injection fuse memory2022
Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as ant2022
Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as ant2022
Antifuse memory arrays with antifuse elements at the back-end-of-line (BEOL)2022
Metal interconnect fuse memory arrays2022