Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Resistive random-access memory device with step height difference

Resistive random-access memory device with step height difference

US Patent 11730070 · Granted Aug 15, 2023

Estimated economic value: $8,098,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dielectric tuning of negative capacitance in dual channel field effect transisto2025
Solid-state switch2025
In-situ low temperature dielectric deposition and selective trim of phase change2025
Gate induced drain leakage reduction in FinFETs2025
Metal hard mask integration for active device structures2025
Redundant bottom pad and sacrificial via contact for process induced RRAM formin2025
Redundant bottom pad and sacrificial via contact for process induced RRAM formin2025
Top contact on resistive random access memory2025
Sound generating apparatus2025
Vertical transport field effect transistors having different threshold voltages 2025
Gate stack quality for gate-all-around field-effect transistors2025
Process-induced forming of oxide RRAM2025