Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof

Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof

US Patent 11728422 · Granted Aug 15, 2023

Estimated economic value: $30,975,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

4H-SiC electronic device with improved short-circuit performances, and manufactu2025
4H—SiC electronic device with improved short-circuit performances, and manufactu2023
Semiconductor structure with varying doping profile and related ICS and devices2017
Integrated power device on a semiconductor substrate having an improved trench g2016
Integrated electronic device with edge-termination structure and manufacturing m2015
Trench MOSFET2015
Integrated power device on a semiconductor substrate having an improved trench g2014
Vertical-conduction integrated electronic device and method for manufacturing th2014
Method for manufacturing an integrated power device having gate structures withi2014
Semiconductor device with vertical current flow and low substrate resistance and2013
Vertical-conduction and planar-structure MOS device with a double thickness of g2007
Single feature size MOS technology power device2003