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Home › Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same

Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same

US Patent 11721589 · Granted Aug 8, 2023

Estimated economic value: $7,870,000 ⓘ

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