Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a high-voltage metal-oxide-semiconductor transistor device

Method for forming a high-voltage metal-oxide-semiconductor transistor device

US Patent 11715784 · Granted Aug 1, 2023

Estimated economic value: $1,159,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Impedance-matched high-current G-type RF connector2025
Methods and devices for geometric partition mode with motion vector refinement2025
Multiplexing techniques for overlapping channels with different priorities2025
Planar mode improvement for intra prediction2025
Method for video encoding with residual and coefficients coding, computing devic2025
Chroma coding enhancement in cross-component sample adaptive offset with virtual2025
Coding enhancement in cross-component sample adaptive offset2025
Coding enhancement in cross-component sample adaptive offset2025
HARQ-ACK codebook generation method, HARQ-ACK codebook transmission method, and 2025
High electron mobility transistor device and manufacturing method thereof2025
High electron mobility transistor device and manufacturing method thereof2025
HEMT and method of fabricating the same2025