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Home › Method and apparatus for performing a read of a flash memory using predicted retention-and-read-disturb-compensated threshold voltage shift offset values

Method and apparatus for performing a read of a flash memory using predicted retention-and-read-disturb-compensated threshold voltage shift offset values

US Patent 11699493 · Granted Jul 11, 2023

Estimated economic value: $80,337,000 ⓘ

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