Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating same

Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating same

US Patent 11665883 · Granted May 30, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cleaner with heat dissipation structure2025
Photoresist compositions and methods of fabricating a semiconductor device2025
Electronic device providing augmented reality and operating method thereof2025
Apparatus and method for authenticating user in augmented reality2025
Artificial intelligence device and method for generating training data2025
Cordless vacuum cleaner and method of controlling operation of cordless vacuum c2025
Semiconductor memory device and method of fabricating the same2025
Semiconductor memory device2025
Semiconductor memory device2025
Semiconductor memory device2025
Speaker identification, verification, and diarization using neural networks for 2025
Display device and audio output system2025