Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor memory device having a multilayer dielectric structure with a retracted sidewall below a bit line

Semiconductor memory device having a multilayer dielectric structure with a retracted sidewall below a bit line

US Patent 11632887 · Granted Apr 18, 2023

Estimated economic value: $730,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure and method for forming the same2025
Semiconductor memory device2025
Semiconductor memory device2025
Semiconductor device and method of forming the same2024
Semiconductor memory structure and the method for forming the same2024
Semiconductor memory device2024
Semiconductor memory device2024
Semiconductor structure and method for forming the same2024
Method of forming semiconductor memory device having saddle portion2024
Method of forming semiconductor memory device having saddle portion2024
Semiconductor memory device2023
Semiconductor memory device2023