Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

US Patent 11631580 · Granted Apr 18, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gas turbine engine2025
Compositions and methods using same for deposition of silicon-containing film2025
Composition for high temperature atomic layer deposition of high quality silicon2025
Group V and VI transition metal precursors for thin film deposition2025
Compositions and methods using same for thermal deposition silicon-containing fi2025
Siloxane compositions and methods for using the compositions to deposit silicon 2025
High temperature atomic layer deposition of silicon-containing film2025
Compositions comprising silacycloalkanes and methods using same for deposition o2025
Organoaminosilane precursors and methods for depositing films comprising same2025
Organoaminosilane precursors and methods for depositing films comprising same2025
Methods for depositing a conformal metal or metalloid silicon nitride film2024
Methods for depositing a conformal metal or metalloid silicon nitride film2024