Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low-leakage regrown GaN p-n junctions for GaN power devices

Low-leakage regrown GaN p-n junctions for GaN power devices

US Patent 11626483 · Granted Apr 11, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Polar code segment encoding method and communication device2025
Anti-CD137 antibodies and method of treating colorectal cancer using them2025
GaN vertical-channel junction field-effect transistors with regrown p-GaN by met2024
GaN vertical-channel junction field-effect transistors with regrown p-GaN by met2024
GaN vertical-channel junction field-effect transistors with regrown p-GaN by met2024
Methods and compositions for cancer treatment2024
Method for synthesizing (S)-nicotine and intermediate thereof2024
Polar code segment encoding method and communication device2024
Proteinaceous heterodimer and use thereof2023
Anti-CD27 antibodies and use thereof2023
Immunoconjugates comprising signal regulatory protein alpha2022
GaN-based threshold switching device and memory diode2022