Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making fin field effect transistor (FinFET) device

Method of making fin field effect transistor (FinFET) device

US Patent 11616124 · Granted Mar 28, 2023

Estimated economic value: $13,429,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Module connector2025
Magnetic device and magnetic random access memory2025
Semiconductor structure and semiconductor device2025
Semiconductor device2025
Package component2025
Phase-change memory cell and method for fabricating the same2025
Method for writing to magnetic random access memory2025
Memory device and semiconductor die, and method of fabricating memory device2025
Techniques for forming a deep trench isolation structure between photodiodes by 2025
Integrating sphere2025
Vise quick-change base with improved structure2024
Semiconductor structure and method of manufacturing the same2024