Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate endcap architectures having relatively short vertical stack

Gate endcap architectures having relatively short vertical stack

US Patent 11563000 · Granted Jan 24, 2023

Estimated economic value: $19,543,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Single gated 3D nanowire inverter for high density thick gate SoC applications2025
High-voltage transistor with self-aligned isolation2025
High-voltage transistor with self-aligned isolation2025
Co-integrated high performance nanoribbon transistors with high voltage thick ga2025
Co-integrated high performance nanoribbon transistors with high voltage thick ga2025
Gate-all-around integrated circuit structures having dual nanoribbon channel str2025
Gate-all-around integrated circuit structures having dual nanoribbon channel str2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Nanoribbon thick gate devices with differential ribbon spacing and width for SOC2025