Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › IC structure with fin having subfin extents with different lateral dimensions

IC structure with fin having subfin extents with different lateral dimensions

US Patent 11545575 · Granted Jan 3, 2023

Estimated economic value: $41,803,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Substrates of semiconductor devices having varying thicknesses of semiconductor 2025
Transistors with multiple silicide layers2025
System for preparing electrode having high cycle efficiency, method for preparin2025
Sediment classification method and system based on bottom echo information of de2025
High-voltage semiconductor device structures2025
Cosmetic storage box2025
Trench isolation having three portions with different materials, and LDMOS FET i2025
Gravure coating device for preparing large-width ultrathin metal lithium strip a2025
Comprehensive control mounting wall seat for shower system and shower system2025
Low sheet resistance coating2025
Asynchronous heating and calendering device, large wide ultra-thin lithium metal2025
FinFET with shorter fin height in drain region than source region and related me2024