Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material

Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material

US Patent 11502200 · Granted Nov 15, 2022

Estimated economic value: $75,157,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
Bottom contact formation for 4F2 vertical DRAM2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Transistors with multiple silicide layers2025
Silicon germanium fins and integration methods2025
Vertical FinFet formation using directional deposition2025
Lateral bipolar transistors2025
Lateral bipolar transistors with gate structure aligned to extrinsic base2025
High-voltage semiconductor device structures2025
Lateral bipolar transistor with gated collector2025