Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

US Patent 11489108 · Granted Nov 1, 2022

Estimated economic value: $6,111,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Highly textured buffer layer to grow YBiPt (110) for spintronic applications2025
Highly textured buffer layer to grow YBiPt (110) for spintronic applications2025
Spin orbit torque based thermal sensor for insitu monitoring of magnetic recordi2025
Spin orbit torque based thermal sensor for insitu monitoring of magnetic recordi2025
Nitrogen doped oxides for lower bandgap2025
Nitrogen doped oxides for lower bandgap2025
Multilayer structures for magnetic recording devices to facilitate targeted magn2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Magnetic sensor half-bridge based on inverse spin hall effect with reduced therm2025