Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Optimized proximity profile for strained source/drain feature and method of fabricating thereof

Optimized proximity profile for strained source/drain feature and method of fabricating thereof

US Patent 11489062 · Granted Nov 1, 2022

Estimated economic value: $7,908,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Optimized proximity profile for strained source/drain feature and method of fabr2025
Optimized proximity profile for strained source/drain feature and method of fabr2025
Optimized proximity profile for strained source/drain feature and method of fabr2025
Semiconductor device and manufacturing method thereof2025
Striking practice device2024
Epitaxial source/drain structure and method2024
Charging device and charging system based on master-slave relationship2024
Pulse-width modulation signal observation circuit and hardware-in-the-loop simul2024
Semiconductor device and method of manufacture2024
Merged source/drain features2024
Optimized proximity profile for strained source/drain feature and method of fabr2023
Optimized proximity profile for strained source/drain feature and method of fabr2023