Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Construction of integrated circuitry and a method of forming an elevationally-elongated conductive via to a diffusion region in semiconductive material

Construction of integrated circuitry and a method of forming an elevationally-elongated conductive via to a diffusion region in semiconductive material

US Patent 11469158 · Granted Oct 11, 2022

Estimated economic value: $11,644,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Construction of integrated circuitry and a method of forming an elevationally-el2020
Renin inhibitor2017