Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array

Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array

US Patent 11468932 · Granted Oct 11, 2022

Estimated economic value: $95,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power semiconductor device and power semiconductor module each having electrodes2025
Computation processing device2025
Storage circuit provided with variable resistance type elements2025
Magnetic film, magnetoresistance effect element and magnetic memory2025
Magnetic film, magnetoresistance effect element and magnetic memory2025
Magnetic film, magnetoresistance effect element and magnetic memory2025
Magnetoresistance effect element, magnetic memory, and film formation method for2025
Magnetoresistance effect element, magnetic memory, and film formation method for2025
Silicon wafer and method for producing silicon wafer2025
Silicon wafer and method for producing silicon wafer2025
Platinum-based sputtering target, and method for producing the same2025
Platinum-based sputtering target, and method for producing the same2025