Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reading memory cells coarsely programmed via interleaved two-pass data programming techniques

Reading memory cells coarsely programmed via interleaved two-pass data programming techniques

US Patent 11462265 · Granted Oct 4, 2022

Estimated economic value: $12,913,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Classification of error rate of data retrieved from memory cells2025
Program refresh with gate-induced drain leakage2025
Mitigating slow read disturb in a memory sub-system2025
Buffer allocation for reducing block transit penalty2025
Search for an optimized read voltage2025
Multiple-pass programming of memory cells using temporary parity generation2025
Temporary parity buffer allocation for zones in a parity group2025
Generating semi-soft bit data during corrective read operations in memory device2025
Generating semi-soft bit data during corrective read operations in memory device2025
Adaptive integrity scan rates in a memory sub-system based on block health metri2025
Volatile data storage in NAND memory2025
Data age and validity-based memory management2025