Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor

Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor

US Patent 11453943 · Granted Sep 27, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for forming a boron nitride film by a plasma enhanced atomic layer depos2025
Vacuum interrupter2025
Methods for forming a topographically selective silicon oxide film by a cyclical2025
Storage device and protocol conversion method by storage device2025
Methods and apparatuses for flowable gap-fill2024
Storage system, data write control method, and non-transitory computer readable 2024
Silicon precursors for silicon nitride deposition2024
Vacuum interrupter and vacuum breaker2023
Method for forming silicon nitride film selectively on top/bottom portions2023
Method for depositing silicon-free carbon-containing film as gap-fill layer by p2023
Method of topology-selective film formation of silicon oxide2023
Method of depositing carbon-containing material on a surface of a substrate, str2023