Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Mechanisms for growing epitaxy structure of finFET device

Mechanisms for growing epitaxy structure of finFET device

US Patent 11437516 · Granted Sep 6, 2022

Estimated economic value: $6,920,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-gate device and related methods2025
Semiconductor device structure with gate stack and method for forming the same2025
Semiconductor structure2025
Semiconductor devices with threshold voltage modulation layer2025
Semiconductor device and method2024
Semiconductor device with tunable epitaxy structures and method of forming the s2024
Semiconductor device with tunable epitaxy structures and method of forming the s2024
Multi-gate device fabrication and structures thereof2024
Mechanisms for growing epitaxy structure of finFET device2024
Mechanisms for growing epitaxy structure of finFET device2024
Multi-gate device and related methods2024
Semiconductor structure and method for manufacturing the same2023