Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhanced etch resistance for insulator layers implanted with low energy ions

Enhanced etch resistance for insulator layers implanted with low energy ions

US Patent 11424164 · Granted Aug 23, 2022

Estimated economic value: $37,610,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Carbon and boron implantation for backside chemical mechanical planarization con2025
Method and system for recognizing surrounding driving environment based on SVM o2025
Semiconductor apparatus and semiconductor system having independent data input/o2025
Semiconductor apparatus and semiconductor system having lun selection cycle, and2025
Memory device and operating method thereof2025
Macroscopic alignment method for wireless charging of electric vehicle and appar2025
Apparatus for detecting and removing dynamic obstacle for robot and operating me2025
Semiconductor apparatus and semiconductor system having LUN selection cycle, and2025
Bit interleaver for low-density parity check codeword having length of 64800 and2025
Electronic device and method of controlling temperature associated with a semico2025
Semiconductor apparatus and semiconductor system having LUN selection cycle, and2025
Method for precision oxidation control by ion implantation2025