Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Production and use of dynamic state charts when growing a single crystal silicon ingot

Production and use of dynamic state charts when growing a single crystal silicon ingot

US Patent 11414778 · Granted Aug 16, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for producing a single crystal silicon ingot using boric acid as a dopan2025
Ingot puller apparatus that use a solid-phase dopant2025
Crystal pulling systems having fluid-filled exhaust tubes that extend through th2024
Crystal pulling systems having fluid-filled exhaust tubes that extend through th2024
Production and use of dynamic state charts when growing a single crystal silicon2023
Production and use of dynamic state charts when growing a single crystal silicon2023
Production and use of dynamic state charts when growing a single crystal silicon2023
Methods for producing a single crystal silicon ingot using boric acid as a dopan2023
Additive feed systems, ingot puller apparatus and methods for forming a single c2022
Additive feed systems, ingot puller apparatus and methods for forming a single c2022
Additive feed systems, ingot puller apparatus and methods for forming a single c2022
System for introducing dopant into a melt of semiconductor or solar-grade materi2022