Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture

Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture

US Patent 11410996 · Granted Aug 9, 2022

Estimated economic value: $7,708,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of fabricating three-dimensional object and apparatus for fabricating thr2025
Semiconductor device and method of manufacture2025
Apparatus and method for use with a substrate chamber2025
Annealing apparatus and method of operating the same2025
Apparatus and method for use with a substrate chamber2025
Semiconductor device and methods of forming the same2025
Method of manufacturing a source/drain of a semiconductor device using multiple 2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device having multi-layer epitaxial structures with different latt2025
Semiconductor device and manufacturing method thereof2025
Systems, methods, and semiconductor devices2025
Shallow trench isolation forming method and structures resulting therefrom2025