Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Drain extended tunnel field effect transistor

Drain extended tunnel field effect transistor

US Patent 11393923 · Granted Jul 19, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High electron mobility transistor (HEMT) with RESURF junction2022
Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI2021
Enhancement mode high electron mobility transistor (HEMT)2020
Dual fin silicon controlled rectifier (SCR) electrostatic discharge (ESD) protec2020
High-electron-mobility transistor (HEMT)2020
FinFET SCR with SCR implant under anode and cathode junctions2020
Semiconductor devices and methods to enhance electrostatic discharge (ESD) robus2019
Non-planar electrostatic discharge (ESD) protection devices with nano heat sinks2019
Low trigger and holding voltage silicon controlled rectifier (SCR) for non-plana2019
Drain extended field effect transistors and methods of formation thereof2017
Tunable FIN-SCR for robust ESD protection2017
Semiconductor devices and arrangements including dummy gates for electrostatic d2017