{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal", "item": "https://www.patentleaderboard.com/patent/11342442"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

US Patent 11342442 · Granted May 24, 2022

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and system for in-line optical scatterometry2025
In-line angular optical multi-point scatterometry for nanomanufacturing systems2025
Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg ref2025
Method and apparatus for fabrication of large area 3D photonic crystals with emb2025
Devices comprising distributed bragg reflectors and methods of making the device2025
Innovative nanopore sequencing technology2025
Dual diffraction order spin-on-glass phase-grating beam-splitter based oblique i2025
Growth of cubic crystalline phase structure on silicon substrates and devices co2024
Growth of cubic crystalline phase structure on silicon substrates and devices co2024
Interferometric lithography grating-mask-based wafer-scale large-area nanopatter2024
Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lith2024
Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lith2024