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Home › Method for preparing large-area transition metal dichalcogenide single-crystal films by performing vapor deposition on a single-crystal c-plane sapphire substrate with <10-10> surface steps

Method for preparing large-area transition metal dichalcogenide single-crystal films by performing vapor deposition on a single-crystal c-plane sapphire substrate with <10-10> surface steps

US Patent 11339501 · Granted May 24, 2022

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