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Home › SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor

SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor

US Patent 11320388 · Granted May 3, 2022

Estimated economic value: $116,000 ⓘ

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