Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a bottom electrode of a magnetoresistive random access memory cell

Method of forming a bottom electrode of a magnetoresistive random access memory cell

US Patent 11289646 · Granted Mar 29, 2022

Estimated economic value: $9,958,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Mini bike2025
Method of forming a bottom electrode of a magnetoresistive random access memory 2025
Method of forming a bottom electrode of a magnetoresistive random access memory 2025
Knob structure2025
Long-acting and stable perovskite solar cell and preparation method thereof2025
Method and device for predicting flow capacity of ecological river with vegetati2025
Via structure and methods of forming the same2024
Via structure and methods of forming the same2024
Artificial intelligence-assisted printed electronics self-guided optimization me2024
Treatment method for a river system in a reservoir area and treatment system2023
VIA structure and methods of forming the same2022
VIA structure and methods of forming the same2022