Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Precessional spin current structure for magnetic random access memory with novel capping materials

Precessional spin current structure for magnetic random access memory with novel capping materials

US Patent 11283010 · Granted Mar 22, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrical device2025
Precessional spin current structure with non-magnetic insertion layer for MRAM2024
Precessional spin current structure with non-magnetic insertion layer for MRAM2024
Method for manufacturing a magnetic random-access memory device using post pilla2024
Method for manufacturing a magnetic random-access memory device using post pilla2024
Method for manufacturing a magnetic random-access memory device using post pilla2024
Multi terminal device stack systems and methods2024
High retention storage layer using ultra-low RA MgO process in perpendicular mag2024
High retention storage layer using ultra-low RA MgO process in perpendicular mag2024
High retention storage layer using ultra-low RA MgO process in perpendicular mag2024
Database query and data mining in intelligent distributed communication networks2023
Magnetic tunnel junction element with RU hard mask for use in magnetic random-ac2023