Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device

Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device

US Patent 11282751 · Granted Mar 22, 2022

Estimated economic value: $10,453,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate-all-around memory devices2025
FinFET devices with dummy fins having multiple dielectric layers2025
Interconnect structure design2025
Method of manufacturing semiconductor devices and a semiconductor device2025
Semiconductor structure with backside power mesh and method of forming the same2025
Method and structure for metal tracks in semiconductor devices2025
Semiconductor device2025
Hybrid nanostructure and fin structure device2025
Semiconductor structure and method for forming the same2025
Semiconductor device and method for forming the same2025
Manufacturing method of semiconductor device having frontside and backside conta2025
Fuse cell structure2025