Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory device containing dual etch stop layers for selector elements and method of making the same

Memory device containing dual etch stop layers for selector elements and method of making the same

US Patent 11271036 · Granted Mar 8, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SOT MRAM including MTJ and selector located on opposite sides of SOT layer and m2025
Spin orbit torque magnetoresistive random access memory containing shielding ele2020
Multi-level phase change device2019
Three-dimensional memory device containing conformal wrap around phase change ma2019
Spin orbit torque magnetoresistive random access memory containing shielding ele2019
Nanoparticle-based resistive memory device and methods for manufacturing the sam2019
Gate voltage controlled perpendicular spin orbit torque MRAM memory cell2019
Electroplated phase change switch2019
Three-dimensional phase change memory arrays and methods of manufacturing the sa2019
Vertical memory structure with array interconnects and method for producing the 2018
Multi-level phase change device2018
Vertical memory structure with array interconnects and method for producing the 2017