{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Semiconductor device having a gate electrode formed in a trench structure", "item": "https://www.patentleaderboard.com/patent/11264475"}]}
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Home › Semiconductor device having a gate electrode formed in a trench structure

Semiconductor device having a gate electrode formed in a trench structure

US Patent 11264475 · Granted Mar 1, 2022

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