Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin field-effect transistor device and method of forming the same

Fin field-effect transistor device and method of forming the same

US Patent 11227940 · Granted Jan 18, 2022

Estimated economic value: $20,216,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wet cleaning with tunable metal recess for via plugs2025
Method for modifying metal-including material in semiconductor manufacturing pro2025
Method of breaking through etch stop layer2025
Method of breaking through etch stop layer2025
Etchant for etching a cobalt-containing member in a semiconductor structure and 2025
Gate resistance improvement and method thereof2025
Semiconductor devices and methods of manufacturing thereof2025
Semiconductor devices and methods of manufacturing thereof2025
Semiconductor devices and methods of manufacturing thereof2025
Semiconductor devices and methods of manufacturing thereof2025
Semiconductor devices and methods of manufacturing thereof2025
Fin field-effect transistor and method of forming the same2025