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Home › Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

US Patent 11220759 · Granted Jan 11, 2022

Estimated economic value: $188,000 ⓘ

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