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Home › 1S1R memory integrated structure with larger selector surface area which can effectively suppress leakage current in the cross array without increasing the overall size of the integrated structure and method for fabricating the same

1S1R memory integrated structure with larger selector surface area which can effectively suppress leakage current in the cross array without increasing the overall size of the integrated structure and method for fabricating the same

US Patent 11205750 · Granted Dec 21, 2021

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