Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide epitaxial substrate, method of manufacturing thereof, silicon carbide semiconductor device, and method of manufacturing thereof

Silicon carbide epitaxial substrate, method of manufacturing thereof, silicon carbide semiconductor device, and method of manufacturing thereof

US Patent 11201218 · Granted Dec 14, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide semiconductor device and method of manufacturing silicon carbide2025
Super junction silicon carbide semiconductor device and manufacturing method the2024
Vertical MOSFET having trench gate structure containing silicon carbide2024
Silicon carbide semiconductor device and method of manufacturing silicon carbide2022
Silicon carbide semiconductor device and a method of manufacturing the silicon c2020
Silicon carbide semiconductor substrate, method of manufacturing silicon carbide2020
Silicon carbide semiconductor substrate, method of manufacturing a silicon carbi2020
Silicon carbide semiconductor device and method of manufacturing silicon carbide2020
Silicon carbide semiconductor substrate, method of manufacturing silicon carbide2020
Method of manufacturing a silicon carbide semiconductor device including deposit2020
Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transist2019
Silicon carbide semiconductor substrate, method of manufacturing silicon carbide2019