Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench process and structure for backside contact solar cells with polysilicon doped regions

Trench process and structure for backside contact solar cells with polysilicon doped regions

US Patent 11183607 · Granted Nov 23, 2021

Estimated economic value: $99,079,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Solar cells having hybrid architectures including differentiated p-type and n-ty2025
Foil-based metallization of solar cells2025
Communication network gateways and associated methods2025
Solar cells having hybrid architectures including differentiated p-type and n-ty2025
Contacts for solar cells2025
Solar cell having conductive contacts in alignment with recast signatures2025
Aligned metallization for solar cells2024
Backside contact solar cells with separated polysilicon doped regions2024
Solar cell having an emitter region with wide bandgap semiconductor material2024
Using multiple radio streams to thwart man-in-the-middle attacks2024
Built-in bypass diode2024
Foil-based metallization of solar cells2024