Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

US Patent 11177216 · Granted Nov 16, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wafer-scale direct bonded array core block for an active electronically steerabl2025
Multi-layer resonator assembly and method for fabricating same2025
Heterogeneous integration and electro-optic modulation of III-nitride photonics 2025
AIN channel heterostructure field effect transistor2025
Strain compensated rare earth group III-nitride heterostructures2024
Field effect transistor having field plate2024
Tunable monolithic group III-nitride filter banks2023
Tunable monolithic group III-nitride filter banks2023
Group III-V semiconductor structures having crystalline regrowth layers and meth2023
Group III-V semiconductor structures having crystalline regrowth layers and meth2023
Group III-V semiconductor structures having crystalline regrowth layers and meth2023
Group III-V semiconductor structures having crystalline regrowth layers and meth2023