Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Modified write voltage for memory devices

Modified write voltage for memory devices

US Patent 11170853 · Granted Nov 9, 2021

Estimated economic value: $18,978,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Iterative decoding technique for correcting DRAM device failures2025
Encoding additional states in a three-dimensional crosspoint memory architecture2025
Cross-point memory read technique to mitigate drift errors2025
Cross-point memory read technique to mitigate drift errors2025
Data correction scheme with reduced device overhead2025
Drift aware read operations2024
Iterative decoder for correcting dram device failures2024
Multi-step pre-read for write operations in memory devices2024
Memory cell read operation techniques2024
Identify the programming mode of memory cells during reading of the memory cells2024
Configurable resistivity for lines in a memory device2024
Shadow DRAM with CRC+RAID architecture, system and method for high RAS feature i2024