Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs

Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs

US Patent 11139176 · Granted Oct 5, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Test method for algorithm applied to handling equipment, computer program produc2025
Sequencing instrument2025
Nitrogen-containing compound, organic electroluminescent device, and electronic 2025
Experimental apparatus and method for interfacial shear characteristic between h2025
Method and system for cooperatively suppressing common-mode voltage and current 2025
Internal circulation type clathrate hydrate-based cold storage system and method2025
Heat dissipation assembly, display module and display device2025
Display device and operating method for display device2025
Experimental apparatus and method for planar interfacial shear of hydrate-bearin2025
Defect detection method and apparatus for cushion layer of cable, device, and st2025
Object detection method and device2025
Organic compound, composition, organic electroluminescent device, and electronic2025