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Home › Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al)

Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al)

US Patent 11139167 · Granted Oct 5, 2021

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