Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Insulated gate turn-off device with designated breakdown areas between gate trenches

Insulated gate turn-off device with designated breakdown areas between gate trenches

US Patent 11114552 · Granted Sep 7, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical insulated gate power switch with isolated base contact regions2025
Vertical insulated gate power switch with isolated base contact regions2025
Insulated trench gates with multiple layers for improved performance of semicond2024
Insulated trench gates with multiple layers for improved performance of semicond2024
Ruggedized symmetrically bidirectional bipolar power transistor2024
Etch stop layer for injecting carriers into drift layer for a vertical power dev2024
Etch stop layer for injecting carriers into drift layer for a vertical power dev2024
Lateral transistors and methods with low-voltage-drop shunt to body diode2024
Insulated trench gates with dopants implanted through gate oxide2023
Insulated trench gates with dopants implanted through gate oxide2023
Layout to reduce current crowding at endpoints2023
Anti-parallel diode formed using damaged crystal structure in a vertical power d2023