Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Indium phosphide wafer having pits on the back side, method and etching solution for manufacturing the same

Indium phosphide wafer having pits on the back side, method and etching solution for manufacturing the same

US Patent 11094549 · Granted Aug 17, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vehicle and control method thereof, control apparatus, vehicle-mounted device an2025
Germanium single-crystal wafer, method for preparing germanium single-crystal wa2025
Method and setup for detecting surface haze of materials2025
Indium phosphide (InP) wafer having pits of olive-shape on the back side, method2022
Indium phosphide (InP) wafer having pits of olive-shape on the back side, method2022
Indium phosphide (InP) wafer having pits of olive-shape on the back side, method2022
Monocrystalline germanium wafers, method for preparing the same, method for prep2021
Aging in tunable semiconductor lasers2004
Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlA2003
Flat minibands with spatially symmetric wavefunctions in intersubband superlatti2003
Apparatus comprising a quantum cascade laser having improved distributed feedbac2002
Intersubband light source with separate electron injector and reflector/extracto2001