Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Power amplifier devices containing inverted power transistor dies and methods for the fabrication thereof

Power amplifier devices containing inverted power transistor dies and methods for the fabrication thereof

US Patent 11088661 · Granted Aug 10, 2021

Estimated economic value: $192,077,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor with dielectric spacers and field plate and method of fabrication the2025
Through substrate via (TSV) validation structure for an integrated circuit and m2025
Transistor with dielectric spacers and method of fabrication therefor2025
Circuit die with isolation test structure2025
Transistor with odd-mode oscillation stabilization circuit2023
Through substrate via (TSV) validation structure for an integrated circuit and m2023
Using a backside mask layer for forming a unique die mark identifier pattern2022
Transistor die with output bondpad at the input side of the die, and power ampli2022
Semiconductor device with selectively etched surface passivation2021
Transistor with non-circular via connections in two orientations2020
Semiconductor device with selectively etched surface passivation2020
Semiconductor devices with a protection layer and methods of fabrication2020