Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin field-effect transistor device and method of forming the same

Fin field-effect transistor device and method of forming the same

US Patent 11088028 · Granted Aug 10, 2021

Estimated economic value: $8,867,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of manufacture2025
Apparatus and method for use with a substrate chamber2025
Annealing apparatus and method of operating the same2025
Apparatus and method for use with a substrate chamber2025
Semiconductor device and methods of forming the same2025
Method of manufacturing a source/drain of a semiconductor device using multiple 2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device having multi-layer epitaxial structures with different latt2025
Systems, methods, and semiconductor devices2025
Shallow trench isolation forming method and structures resulting therefrom2025
Source and drain engineering process for multigate devices2025
Multi-gate device and method of fabrication thereof2025